Kingston HyperX Impact Black 4GB DDR3L 1600MHz RAM (HX316LS9IB/4)

Product Highlights

• 4GB Laptop Gaming RAM
• DDR3 1600MHz
• CL 9
• 48.125ns (min.) Row Cycle Time (tRCmin)
• 260ns (min.) tRFCmin
• 1.35V Maximum Operating Power
• 6.7 x 3 x 0.7 CM

What's in the box:

1 X Kingston HyperX Impact Black 4GBD DDR3 1600MHz Laptop Gaming RAM - Low Voltage (1.2V - HX316LS9IB/4)

Feature Highlights

HyperX HX316LS9IB/4 is a 512M x 64-bit (4GB) DDR3L-1600 CL9 SDRAM (Synchronous DRAM) 1Rx8, low voltage, memory module, based on eight 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3L-1600 at a low latency timing of 9-9-9 at 1.35V or 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:

FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component

SPECIFICATIONS

• CL(IDD) 9 cycles
• Row Cycle Time (tRCmin) 48.125ns (min.)
• Refresh to Active/Refresh 260ns (min.)
• Command Time (tRFCmin)
• Row Active Time (tRASmin) 33.75ns (min.)
• Maximum Operating Power TBD W* @1.35V
• UL Rating 94 V - 0
• Operating Temperature 0o
• C to 85o C
• Storage Temperature -55o
• C to +100o C
• *Power will vary depending on the SDRAM used.